1 features flat window design which is suited to optical systems low dark current : i ceo = 5 na (typ.) fast response : t r , t f = 3 m s (typ.) wide directional sensitivity base pin for easy circuit design (pnz102f) phototransistors pna1401lf, pnz102f silicon npn phototransistors for optical control systems absolute maximum ratings (ta = 25?c) parameter symbol ratings unit collector to emitter voltage v ceo 30 v collector to base voltage v cbo * 40 v emitter to collector voltage v eco 5v emitter to base voltage v ebo * 5v collector current i c 50 ma collector power dissipation p c 150 mw operating ambient temperature t opr C25 to +85 ?c storage temperature t stg C30 to +100 ?c * pnz102f only 1: emitter 2: collector unit : mm ?.6 0.15 glass window 2.54 0.25 1.0 0.2 1.0 0.15 ?.75 max. 2-?.45 0.05 4.5 0.2 12.7 min. 45 3? 1 2 pna1401lf 1: emitter 2: base 3: collector unit : mm ?.6 0.15 glass window 2.54 0.25 1.0 0.2 1.0 0.15 ?.75 max. 3-?.45 0.05 4.5 0.2 12.7 min. 45 3? 1 3 2 pnz102f
2 pna1401lf, pnz102f phototransistors 50 r l t d : delay time t r : rise time (time required for the collector photo current to increase from 10% to 90% of its final value) t f : fall time (time required for the collector photo current to decrease from 90% to 10% of its initial value) v cc sig.out sig.in (input pulse) (output pulse) 10% 90% t d t r t f p c ?ta 200 160 120 80 40 ambient temperature ta (?c ) collector power dissipation p c (mw) 0 20406080100 0 ?20 i ce(l) ?v ce 2.0 1.6 1.2 0.4 0.8 0 collector to emitter voltage v ce (v) collector photo current i ce(l) (ma) 0 8 16 24 32 i ce(l) ?l 10 1 10 ? 10 ? illuminance l (lx) collector photo current i ce(l) (ma) 10 10 2 10 3 10 ? 1 v ce = 10v ta = 25?c t = 2856k l = 50 lx 100 lx 200 lx 300 lx 400 lx 500 lx 600 lx 700 lx 800 lx 900 lx 1000 lx electro-optical characteristics (ta = 25?c) parameter symbol conditions min typ max unit dark current i ceo v ce = 10v 5 300 na collector photo current i ce(l) v ce = 10v, l = 100 lx *1 0.1 0.3 ma peak sensitivity wave length l p v ce = 10v 800 nm acceptance half angle q measured from the optical axis to the half power point 40 deg. response time t r , t f *2 v cc = 10v, i ce(l) = 5ma, r l = 100 w 3 m s collector saturation voltage v ce(sat) l = 500 lx *1 pna1401lf i ce(l) = 0.1ma 0 .2 0.4 v pnz102f i ce(l) = 0.1ma *1 measurements were made using a tungsten lamp (color temperature t = 2856k) as a light source. *2 switching time measurement circuit
3 phototransistors pna1401lf, pnz102f 0? 10? 20? 30? 40? 50? 60? 70? 80? 90? directivity characteristics i ceo ?ta 10 3 10 1 10 2 ambient temperature ta (?c ) v ce = 10v dark current i ceo (na) 10 ? ?40 0 40 80 120 v ce = 10v t = 2856k i ce(l) ?ta 10 10 ? 1 ambient temperature ta (?c ) collector photo current i ce(l) (ma) ?40 0 40 80 120 10 ? spectral sensitivity characteristics 100 80 60 40 20 wavelength l (nm) relative sensitivity s (%) 400 600 800 1000 1200 0 200 ta = 25?c t r ?i ce(l) collector photo current i ce(l) (ma) rise time t r ( s) v cc = 10v ta = 25?c 10 3 10 2 10 1 10 ? 10 ? 10 10 2 1 10 ? 10 ? t f ?i ce(l) collector photo current i ce(l) (ma) fall time t f ( s) v cc = 10v ta = 25?c 10 3 10 2 10 1 10 ? 10 ? 10 10 2 1 10 ? 10 ? 20 90 100 80 70 60 50 40 30 relative sensitivity s (%) i = 500 lx 100 lx 500 100 r l = 1k r l = 1k 500 100
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